In a groundbreaking development, Shin-Etsu Chemical has introduced a 12-inch (300mm) QST (Qromis Substrate Technology) substrate designed specifically for high-quality gallium nitride (GaN) epitaxial growth. This advancement marks a major leap in GaN technology, addressing long-standing challenges in producing large-diameter, defect-free GaN wafers.
GaN devices are crucial for applications such as power electronics, electric vehicles, and high-frequency devices, but scaling up to larger wafer sizes has been a costly barrier. Shin-Etsu’s 300mm QST substrate solves this by preventing warping and cracking during the growth process, allowing for thicker, more robust GaN layers without the need for expensive pure GaN substrates. This breakthrough is expected to significantly reduce manufacturing costs and boost productivity.
Shin-Etsu Chemical’s QST substrates are already in use at smaller sizes (150mm and 200mm), but this new 12-inch version promises to accelerate the adoption of GaN technology in sectors like data centers, electric vehicles, and beyond. Showcased at SEMICON Taiwan 2024, the 300mm substrate is already drawing attention from major players in the semiconductor industry, signaling a promising future for large-scale GaN device production. With its cutting-edge solutions, Shin-Etsu is pushing the boundaries of semiconductor innovation, paving the way for the next generation of power and high-frequency devices.
All Comments (0)