In a breakthrough poised to transform the power electronics landscape, OKI Electric and Shin-Etsu Chemical have announced significant progress in their Crystal Film Bonding (CFB) technology. This innovation focuses on gallium nitride (GaN) vertical power devices, which are set to play a key role in industries such as electric vehicles, next-gen power management, and beyond-5G communications.
At the heart of this technology is the ability to lift off only the GaN functional layer from Shin-Etsu’s proprietary QST substrate, and bond it to a high-thermal-conductivity base, dramatically improving heat dissipation and vertical conductivity. This makes GaN devices capable of handling large currents with better efficiency and reduced power loss—a game-changer for high-power applications.
Crucially, the QST substrates can be reused after the GaN layer is peeled away, offering a significant cost advantage in manufacturing. This development could help scale vertical GaN power devices from niche to mainstream, making high-performance, energy-efficient solutions more accessible than ever before.
With the latest advancements announced in September 2024, this technology is now closer to practical, large-scale production. The collaboration between these two industry giants continues to push the boundaries of power electronics and semiconductor technology.
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