Qromis, a Silicon Valley innovator, has taken a major leap forward in the gallium nitride (GaN) semiconductor industry by collaborating with Shin-Etsu Chemical to unveil a groundbreaking 300mm QST® substrate. This new development, showcased at SEMICON Taiwan in September 2024, marks a significant milestone for GaN technology, allowing for greater scalability and cost-efficiency in high-power applications like electric vehicle charging and data center power systems.
What sets this substrate apart is its ability to handle high-voltage GaN devices—up to an impressive 2000V—without the thermal expansion issues that plagued previous silicon-based technologies. GaN has been heralded as the future of energy-efficient semiconductors, offering faster switching speeds and lower energy consumption. But until now, scaling GaN for mass production has been a challenge.
By eliminating wafer cracking and warping, Qromis’ QST® technology unlocks the full potential of GaN, paving the way for more powerful, cost-effective devices in industrial and automotive markets. With high-volume production set to begin, the Qromis-Shin-Etsu partnership is poised to accelerate GaN adoption and redefine energy efficiency standards.
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