In a game-changing move for the semiconductor industry, Transphorm has announced its latest breakthrough— the world’s first 1200V GaN-on-Sapphire power semiconductor device. Targeting high-power applications such as electric vehicle charging systems, industrial power supplies, and three-phase power systems, this innovation promises to redefine power conversion efficiency.
What sets this technology apart is its ability to deliver unprecedented performance at lower costs compared to traditional silicon carbide (SiC) devices. With a power density boost and up to 98.7% efficiency in 5kW converters, Transphorm's solution not only competes with, but outshines many SiC-based systems. The core of this innovation lies in Transphorm's proprietary GaN platform, designed for high voltage, normally-off devices, which makes it ideal for next-gen automotive systems like DC-DC converters and on-board chargers.
As EVs increasingly move toward 800V battery systems, Transphorm’s 1200V GaN-on-Sapphire device is poised to play a critical role in scaling up high-efficiency power management in larger vehicles. By combining cutting-edge technology with scalable manufacturing, Transphorm is pushing the boundaries of what’s possible in the GaN power revolution.
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