STMicroelectronics has launched its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, establishing a new benchmark in power efficiency, density, and robustness. Designed to meet the evolving needs of both automotive and industrial markets, the new MOSFETs are specifically optimized for electric vehicle (EV) traction inverters, a critical component in EV powertrains.
Compared to its predecessors, the fourth-generation SiC MOSFETs boast significantly lower RDS(on), reducing conduction losses and boosting overall system efficiency. Faster switching speeds minimize switching losses, making these MOSFETs ideal for high-frequency applications, leading to more compact and efficient power converters.
One of the standout features of this new technology is its enhanced robustness under dynamic reverse bias (DRB) conditions, surpassing the stringent AQG324 automotive standard. This ensures reliable performance under extreme conditions, crucial for EV systems.
The fourth-generation devices continue to deliver excellent RDS(on) x area performance, supporting high current handling while minimizing power loss. With a 12-15% reduction in average chip size compared to third-gen counterparts, these MOSFETs enable more compact power converter designs, saving valuable space and reducing system costs.
STMicroelectronics is committed to continued innovation in SiC technology, with plans to introduce even more advancements by 2027.
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