At the PCIM Asia 2024 exhibition, Toshiba presented a range of cutting-edge products, including high-power IEGTs, SiC MOS modules, and SiC discrete devices, marking significant progress in power electronics. Key highlights include:
High-Power IEGTs: Toshiba updated its 3300V-6500V IEGT series with new models like the ST1000GXH35, featuring PPI press-pack packaging for enhanced reliability and heat dissipation. These products are designed for various energy applications, from power generation to distribution.
SiC MOS Modules: Toshiba's third-generation SiC MOSFET modules, such as the MG800FXF1ZMS3, use advanced silver sintering technology to reduce power loss and cooling system size. These modules support 1200V to 3300V, ideal for industrial applications requiring high efficiency.
SiC 3-Phase Inverter: A compact 1200V SiC MOSFET-based inverter designed for 18kW motor drives, integrating SiC MOSFETs, optocouplers, and amplifiers on a small 250mm x 145mm board.
SiC Discrete Devices: Toshiba’s SiC MOSFETs, known for their low conduction losses and wide VGS control range, cater to EV charging, data centers, and renewable energy applications.
Toshiba emphasized its high-quality standards in IGBT and SiC production, with dedicated automotive-grade SiC production lines. The company is optimistic about the market potential in electric vehicles and renewables, pushing innovation with its third and forthcoming fifth-generation SiC products.
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